Novel Material – Polyimide
- Optimization of lithography process
- Evaluation and improvement of adhesion
- Reliability test: chemical resist test, TCT, u-HAST
- Design and verification of electrical characteristics
- BEOL location-controlled grain (LCG) technique
- Controlled thermal budgets
- Monolithic fabricated single-crystal Si islands (SCI)
- 40 nm FinFETs in Si islands with excellent electrical performance
Wafer-level Bumpless Through-Silicon-Via (TSV)
- Wafer-level polymer bonding technology
- Design and fabrication of bumpless TSV structure
- Plasma via bottom cleaning technique
- Reliability test: EM test, TCT, u-HAST.
- Novel lumped circuit model for HBM applications
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